NT & RP Journal
THE EFFECTS INDUCED BY THE GAMMA-RAY RESPONSIBLE FOR THE THRESHOLD VOLTAGE SHIFT OF COMMERCIAL P-CHANNEL POWER VDMOSFET
......: info......: history......: editorial......: archive......: for authors......: subscription
   
Image NTRP

Vol. XXXIII, No. 1, Pp. 1-138
March 2018
UDC 621.039+614.876:504.06
ISSN 1451-3994

Back to Contents

 


Pages: 81-86

Authors:
Marija D. ObrenoviŠ, MiliŠ M. PejoviŠ, Djordje R. LazareviŠ, and Nenad M. KartaloviŠ

Abstract

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.

Key words: VDMOSFET, gamma ray irradiation, threshold voltage shift, radiation dose

FULL PAPER IN PDF FORMAT (506 KB)

Vinča Institute of Nuclear Sciences :: Designed by milas :: July 2007
Operated by acapanic :: Last updated on June, 2018