Pages: 406-414

Authors: Snežana M. Djorić-Veljković, Ivica Dj. Manić, Vojkan S. Davidović,
Danijel M. Danković, Snežana M. Golubović, Ninoslav D. Stojadinović

Abstract

The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing) of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO₂-Si interface.

Key words: VDMOSFET, gamma radiation, electrical stress, threshold voltage, gate oxide charge, interface traps

FULL PAPER IN PDF FORMAT (1,66 MB)