XXXVIII, No. 3, Pp. 145-213
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Authors: Nenad M. Kartalović, Tomislav M. Stojić, and Uroš D. Kovačević
The paper considers the effect of radiation exposure on the characteristics of the superinsulator phase using Monte Carlo simulation of radiation transport through superinsulator films. The unique physical properties of the superinsulator state are captured by a 2-D array model of Josephson junctions to describe the structure of the material. Simulations were carried out for different film thicknesses, as well as for radiation beams of different geometries. In the assessment of radiation resistance, the Monte Carlo method of simulating the passage of radiation through the material and the deposition of energy gives good results. Using numerical simulation, along with a precise definition of the problem from the point of view of the characteristics of the radiation field and the observed material environment, it is possible to predict the response of thin superinsulator films to ionizing radiation. Based on the obtained results, suggestions were given for the possibility of further application of superinsulator materials in the production of electronic circuits.
Key words: ionizing radiation, superinsulator film, radiation resistance
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