NT & RP Journal
MONTE CARLO OPTIMIZATION OF REDUNDANCY OF NANOTECHNOLOGY COMPUTER MEMORIES IN THE CONDITIONS OF BACKGROUND RADIATION
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Vol. XXXIII, No. 2, Pp. 139-230
June 2018
UDC 621.039+614.876:504.06
ISSN 1451-3994

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Pages: 208-216

Authors: Edin Ĉ. Doliĉanin and Irfan S. Fetahoviĉ

Abstract

The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results.

Key words: nanotechnology computer memory, optimization, redundancy, Monte Carlo simulation, radiation

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