Nuclear Technology & Radiation Protection Journal


NT & RP Journal	APPLICATION OF pMOS DOSIMETERS IN LOW-FIELD MODE FOR RADIATION DOSE MEASUREMENTS WHICH COULD BE USED IN RADIOTHERAPY
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Vol. XXXI, No. 4, Pp. 307-392 December 2016 UDC 621.039+614.876:504.06 ISSN 1451-3994 Back to Contents	Pages: 349-355 Authors: Svetlana M. Pejović, Momčilo M. Pejović, and Dragan Stojanov Abstract The pMOS dosimeters sensitivity (Tyndall National Institute, Cork, Ireland) to gamma and X-ray irradiation and 2000 h fading at room temperature is presented. The radiation fields were created using a ⁶⁰Co source for two dose ranges (1-5 Gy and 10-50 Gy) as well as for X-ray units of a 280 kV spectrum for a single dose range from 0.1 to 1 Gy. Irradiation was performed in low-field mode (no gate bias during irradiation, V_irr = 0 V), sensitivity characterized by the threshold voltage shift as a function of the absorbed radiation dose and time after irradiation. Linear dependence between the threshold voltage shift and the absorbed radiation dose was only established for pMOS dosimeters which were irradiated by gamma rays in the dose range of 1 to 5 Gy. Obtained results show that the sensitivity of these components is much higher in case of X-ray radiation than in that of gamma ray radiation. Moreover, the fading of irradiated pMOS dosimeters with X-rays is higher than in the ones irradiated with gamma rays. Key words: pMOS dosimeter, radiation dose, threshold voltage shift, fading, in vivo dosimetry FULL PAPER IN PDF FORMAT (515 KB)
Vinča Institute of Nuclear Sciences :: Designed by milas :: July 2007 Operated by acapanic :: Last updated on February, 2017

Pages: 349-355

Authors: Svetlana M. Pejović, Momčilo M. Pejović, and Dragan Stojanov

Abstract
The pMOS dosimeters sensitivity (Tyndall National Institute, Cork, Ireland) to gamma and X-ray irradiation and 2000 h fading at room temperature is presented. The radiation fields were created using a ⁶⁰Co source for two dose ranges (1-5 Gy and 10-50 Gy) as well as for X-ray units of a 280 kV spectrum for a single dose range from 0.1 to 1 Gy. Irradiation was performed in low-field mode (no gate bias during irradiation, V_irr = 0 V), sensitivity characterized by the threshold voltage shift as a function of the absorbed radiation dose and time after irradiation. Linear dependence between the threshold voltage shift and the absorbed radiation dose was only established for pMOS dosimeters which were irradiated by gamma rays in the dose range of 1 to 5 Gy. Obtained results show that the sensitivity of these components is much higher in case of X-ray radiation than in that of gamma ray radiation. Moreover, the fading of irradiated pMOS dosimeters with X-rays is higher than in the ones irradiated with gamma rays.

Key words: pMOS dosimeter, radiation dose, threshold voltage shift, fading, in vivo dosimetry

FULL PAPER IN PDF FORMAT (515 KB)