Nuclear Technology & Radiation Protection Journal


NT & RP Journal	THE STUDY OF RADIATION DAMAGE OF EPROM 2764 MEMORY
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Vol. XXXI, No. 3, Pp. 197-305 September 2016 UDC 621.039+614.876:504.06 ISSN 1451-3994 Back to Contents	Pages: 233-239 Authors: Grzegorz Domanski, Bogumil Konarzewski, Robert Kurjata, Janusz Marzec, Krzysztof Zaremba, Michal Dziewiecki, Marcin Ziembicki, and Andrzej Rychter Abstract A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte. Key words: radiation damage, EPROM, non-volatile memory FULL PAPER IN PDF FORMAT (520 KB)
Vinča Institute of Nuclear Sciences :: Designed by milas :: July 2007 Operated by acapanic :: Last updated on November, 2016

Pages: 233-239

Authors: Grzegorz Domanski, Bogumil Konarzewski, Robert Kurjata, Janusz Marzec, Krzysztof Zaremba, Michal Dziewiecki, Marcin Ziembicki, and Andrzej Rychter

Abstract

A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte.

Key words: radiation damage, EPROM, non-volatile memory

FULL PAPER IN PDF FORMAT (520 KB)