Pages: 179-185

Authors: Milić M. Pejović, Svetlana M. Pejović, Dragan Stojanov,
and Olivera F. Ciraj-Bjelac

Abstract

In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using ⁶⁰Co source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift ?V_t and radiation dose D. The application of positive bias of +5 V at the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in ?V_t and also, approximately a linear dependence between ?V_t and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.

Key words: RADFET, gamma-ray irradiation, X-ray irradiation, threshold voltage shift, radiation dose

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