NT & RP Journal
EFFECTS OF ION BEAMS ON FLASH MEMORY CELLS
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NTRP_June 2014

Vol. XXIX, No. 2, Pp. 97-169
June 2014
UDC 621.039+614.876:504.06
ISSN 1451-3994

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Pages: 116-122

Authors:
Marija D. Obrenoviĉ, Djordje R. Lazareviĉ,
Edin Ĉ. Doliĉanin, and Miloš Lj. Vujisiĉ


Abstract

This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity,  while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.

Key words: flash memory, radiation hardness, Monte-Carlo simulation

FULL PAPER IN PDF FORMAT (1,03 MB)

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