XXIX, No. 1, Pp. 1-95
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Authors: Myo Min O, Nahrul Khair Bin Alang Md Rashid, Julia Bin Abdul Karim, Muhammad Rawi Bin, Mohamed Zin, Rosminazuin Bt. Ab. Rahim, Amelia Wong Azman,
and Nurul Fadzlin Hasbullah
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.
bipolar junction transistor, displacement damage, ionizing damage, recombination current
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