NT & RP Journal
SIMULATION OF RADIATION EFFECTS IN ULTRA-THIN INSULATING LAYERS
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Vol. XXVIII, No. 3, Pp. 237-340
September 2013
UDC 621.039+614.876:504.06
ISSN 1451-3994

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Pages: 308-315

Authors:
Ljubinko B. Timotijeviæ, Miloš Lj. Vujisiæ, Koviljka Dj. Stankoviæ

Abstract


The Monte Carlo simulations of charged particle transport are used to investigate the effects of exposing ultra-thin layers of insulators (commonly used in integrated circuits) to beams of protons, alpha particles and heavy ions. Materials considered include silicon dioxide, aluminum nitride, alumina, and polycarbonate – lexan. The parameters that have been varied in simulations include the energy of incident charged particles and insulating layer thickness. Materials are compared according to both ionizing and non-ionizing effects produced by the passage of radiation.

Key words: insulator, proton, alpha particle, ion beam, radiation effect, Monte Carlo simulation

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