Pages: 290-296

Authors: Ivan D. Knežević, Nevena S. Zdjelarević, Marija D. Obrenović, and Miloš Lj. Vujisić

Abstract

Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region disposed between and in electrical contact with electrodes. Following materials were considered for the active region: titanium dioxide, zirconium dioxide, hafnium dioxide, strontium titanium trioxide and galium nitride. Obtained results show that significant amount of oxygen ion – oxygen and nonmetal ion – nonmetal vacancy pairs is to be generated. The loss of such vacancies from the device is believed to deteriorate the device performance over time. Estimated absorbed dose values in the memristor for different constituting materials are of the same order of magnitude because of the close values of treshold displacement energies for the investigated materials.

Key words: memristor, proton beam, ion beam, Monte Carlo simulation, absorbed dose

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