NT & RP Journal

RADIATION-SENSITIVE FIELD EFFECT TRANSISTOR
RESPONSE TO GAMMA-RAY IRRADIATION

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Vol. XXVI, No. 1, Pp. 1-99
April 2011
UDC 621.039+614.876:504.06 ISSN 1451-3994

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Pages: 25-31

Authors:
Milić M. Pejović, Momčilo M. Pejović, Aleksandar B. Jakšić

Abstract


The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V the sensitivity of these transistors can be presented as the threshold voltage shift and the absorbed irradiation dose ratio. On the bases of the subthreshold characteristics and transfer characteristics in saturation using the midgap technique we have determined the densities of radiation induced oxide traps and interface traps responsible for the threshold voltage shift. In addition, the charge pumping technique was used to determine the energy density of true interface traps. It has been shown that radiation-induced oxide traps have dominant  role on threshold  voltage  shift,  especially  for gate biases during the irradiation of 5 V and 10 V.

Key words: p-channel MOS transistor, interface traps, oxide trapped charge, radiation sensitivity

FULL PAPER IN PDF FORMAT ( 657 KB)

Vinča Institute of Nuclear Sciences :: Designed by milas :: July 2007
Last updated on May, 2011