XXXIII, No. 2, Pp. 139-230
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Authors: Edin Ĉ. Doliĉanin and Irfan S. Fetahoviĉ
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results.
nanotechnology computer memory, optimization, redundancy, Monte Carlo simulation,
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